Comparison of convergent beam electron diffraction and geometric phase analysis for strain measurement in a strained silicon device |
| |
Authors: | Diercks D Lian G Chung J Kaufman M |
| |
Affiliation: | Center for Advanced Research and Technology (CART), University of North Texas, Denton, Texas, USA. |
| |
Abstract: | Convergent beam electron diffraction and geometric phase analysis were used to measure strain in the gate channel of a p-type strained silicon metal-oxide-semiconductor field-effect transistor. These measurements were made on exactly the same transmission electron microscopy specimen allowing for direct comparison of the relative advantages of each technique. The trends in the strain values show good agreement in both the [110] and [001] directions, but the absolute strain values are offset from each other. This difference in the absolute strain measured using the two techniques is attributed to the way the reference strain is defined for each. |
| |
Keywords: | Convergent beam electron diffraction (CBED) geometric phase analysis (GPA) high‐angle annular‐dark‐field scanning transmission electron microscopy (HAADF STEM) local strain measurement |
本文献已被 PubMed 等数据库收录! |