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Outer space grown semi-insulating GaAs and its applications |
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| Authors: | Lin Lanying Zhang Mian Zhong Xingru Yamada Masayoshi Chen Nuofu |
| Affiliation: | (1) Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China;(2) Hebei Institute of Semiconductors, 050002 Shijiazhuang, China;(3) Department of Electronics & Information Science, Kyoto Institute of Technology, 606 Kyoto, Japan |
| Abstract: | GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices. |
| Keywords: | GaAs outer-space microgravity integrated-circuit |
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