| Gate Grounded NMOS器件的ESD性能分析 |
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| 引用本文： | 李亮,朱科翰.Gate Grounded NMOS器件的ESD性能分析[J].电子与封装,2011,11(2):18-21. |
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| 作者姓名： | 李亮 朱科翰 |
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| 作者单位： | 苏州市职业大学电子系;昆泰集成电路(上海)有限公司; |
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| 摘 要： | 文章基于0.18μm CMOS工艺制程的1.8V NMOS器件,从工艺的角度并用TLP测试系统对栅极接地的NMOS(GGNMOS)ESD器件进行比较分析.介绍了SAB和ESD注入对GGNMOS的性能影响,影响GGNMOS ESD性能的瓶颈是均匀开启性.在GGNMOS版图等其他特征参数最优的前提下,采用SAB能改善其均匀...
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| 关 键 词： | 静电放电 栅极接地 注入 |
Analysis of ESD Performance for Gate Grounded NMOS Device |
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| LI Liang,ZHU Ke-han.Analysis of ESD Performance for Gate Grounded NMOS Device[J].Electronics & Packaging,2011,11(2):18-21. |
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| Authors: | LI Liang ZHU Ke-han |
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| Affiliation: | LI Liang1,ZHU Ke-han2(1.Department of Electronics,Suzhou Vocational University,Suzhou 215104,China,2.Chrontel IC(Shanghai)Co.Ltd.,Shanghai 201203,China) |
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| Abstract: | Based on 1.8V NMOS devices which are fabricated in certain 0.18μm-CMOS process,gate grounded NMOS（GGNMOS） ESD devices are analyzed and compared from process perspective by using TLP testing system.The effects in GGNMOS ESD performances with salicide block（SAB） and ESD implant are introduced,respectively.Uniform turn-on of GGNMOS is important.Comparing with the GGNMOS device with or without SAB while keep all other layout parameters the same,those with SAB could improve current uniformity,which in turn show higher robustness.The transient triggering voltage of GGNMOS is about 7V,it will not threaten gate oxide reliability,so PESD implant is not necessary. |
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| Keywords: | ESD gate grounded implant |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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