Photoconductivity of pyrolytic CdS films alloyed with Cs |
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| Authors: | T. L. Maiorova V. G. Kluyev T. V. Samofalova |
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| Affiliation: | (1) Applied Science Department, Al-Balqa Applied University, Salt, Jordan;(2) Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikova av. 13, 210717 Vitebsk, Belarus;(3) Belarusian State University, Nezavisimosti av. 4, 220050 Minsk, Belarus;(4) Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, P. Brovka str. 19, 220072 Minsk, Belarus;(5) Koszalin University of Technology, Sniadeckich str. 2, 75-453 Koszalin, Poland;(6) Institute of Electronics, National Academy of Sciences of Belarus, Logoiski trakt str. 22, 220090 Minsk, Belarus |
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| Abstract: | The investigation of the influence of Cs alloy on recombination processes has been carried out for the pyrolytic CdS films. The effect of photomemory has been observed for such structures, both pure and alloyed. Cs impurity introduction leads to a five- to tenfold photocurrent increase in comparison with pure samples. It also leads to increase of the nonequilibrium conductivity relaxation time from 300 to 104 s. The stored conductivity is due to the present of the internal potential barriers between the different conductivity areas, which are related with the heterogeneity of the investigated polycrystalline structures. Here, the non-equilibrium conductivity relaxation kinetic of alloyed CdS films corresponds to the case of square-law recombination. It is determined that the potential barrier increases from 0.33 to 0.44 eV along the nonequilibrium conductivity relaxation. |
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