Microwave dielectric properties of BaTi4O9 thin film |
| |
| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, 1-5 Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Republic of Korea;2. New Materials Evaluation Center, Korea Research Institute of Standards and Science, Daeduk Science Town, Taejon 305-600, Republic of Korea;3. Department of Radio Science and Engineering, Korea University, 1-5 Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Republic of Korea;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China;2. Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6;3. Department of Applied Physics, Donghua University, Ren Min Road 2999, Songjiang, Shanghai 201620, China;4. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China;1. Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093 China;2. Faculty of Mechanical and Electronic Engineering, Kunming University of Science and Technology, Kunming 650093 China;1. Polish Academy of Sciences, Institute of Agrophysics, Department of Metrology and Modelling of Agrophysical Processes, Doświadczalna 4, 20-290 Lublin, Poland;2. Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland |
| |
| Abstract: | BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (ɛr) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The ɛr of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The ɛr of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36–39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1–3 GHz. Since BaTi4O9 film has a high ɛr and a low tan δ, the BaTi4O9 film can be used as the microwave devices. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
