Electric isolation of porous silicon by electro generated polyethyleneimine film,comparison to thermal oxide |
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| Affiliation: | 1. Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Fac. Sc. Monastir, 5018 Monastir, Tunisia;2. Laboratoire de Chimie des Matériaux et Interfaces, UFR Sciences et Techniques La Bouloie, 16 route de Gray, 25030 Besançon Cedex, France;3. Laboratoire d’Ingénierie et de Fonctionnalisation des Surfaces, ECL-Lyon, 69134Ecully Cedex, France;4. Unité de Recherche de Physique des Semiconducteurs, IPEST, La Marsa, 2070 Tunis, Tunisia |
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| Abstract: | Electrochemical oxidation of diethylenetriamine (DETA) charged with 0.1 M LiSO3CF3, leads to a polymeric coating (polyethyleneimine film: PEI) on the porous silicon (PS) surface. The obtained passivated electrode is characterized through IRTF spectrometry and through C(V) curves on PS/PEI structures showing good insulating properties of the PEI film. The passivated electrode presents a linear pH sensitivity close to 62 mV per pH unit. Such sensitivity is higher compared to flat PEI passivated silicon electrode. The results were fitted with the generalized site-binding theory and the following parameters were found: the surface site density Ns was found to be equal to 3.6 × 1016 cm? 2 and pKH (KH acido-basic constant of the amino group) is ? 5.54. |
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