Characterization of Pb(Zr,Ti)O3 thin films deposited on stainless steel substrates by RF-magnetron sputtering for MEMS applications |
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| Affiliation: | 1. Department of Mechanical Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan;2. Faculty of Science, Yokohama City University, Yokohama 236-0027, Japan;1. Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China;2. Shenyang Guangtai Vacuum Technology Co., Ltd., Shenyang 110000, PR China;1. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China;2. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China;3. Key Laboratory of High Efficiency and Clean Mechanical Manufacture of MOE, School of Mechanical Engineering, Shandong University, Jinan 250061, China;4. Department of Mechanical Engineering Sciences, University of Surrey, Surrey GU2 7XH, UK |
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| Abstract: | Piezoelectric Pb(Zr,Ti)O3 (PZT) thin films with a composition near the morphotoropic phase boundary were deposited directly on cantilever-shaped stainless steel (SUS) substrates using RF-magnetron sputtering for application of micro-electromechanical systems (MEMS). X-ray diffraction measurements reveal that the PZT thin films have a polycrystalline perovskite structure with a preferential orientation of (1 0 1). Cross-section morphology – observed using a scanning electron microscope – indicates that the PZT films exhibit a dense columnar structure without pores or clacks. The films’ P–E hysteresis loops indicate clear ferroelectricity. Based on the deflection characteristics of the cantilever, the effective piezoelectric coefficient e31 of the PZT films is measured to be −1.35 C/m2. |
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