Effects of composition and stacking sequence on dielectric properties of the multilayered (Pb,Sr)TiO3 thin films for tunable device application |
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| Affiliation: | 1. Department of Electronic Materials Engineering, The University of Suwon, 77 San Wawoo-ri Bongdam Whaseongsi, Keonggi-do 445-743, Republic of Korea;2. Department of Electronic Engineering, The University of Suwon, Suwon 445-743, Republic of Korea;3. E2S Technologies Co. Ltd., KITI 712, Suwon 445-743, Republic of Korea;1. Department of Interventional Cardiology, Piedmont Heart Institute, Atlanta, GA, USA;2. Department of Internal Medicine, Universitätsklinikum des Saarlandes, Saarland University, Homburg/Saar, Germany;3. Institute for Medical Engineering and Science, Massachusetts Institute of Technology, Cambridge, MA, USA;4. Department of Medicine, Perelman School of Medicine, University of Pennsylvania, Philadelphia, PA, USA;5. Department of Medicine, SUNY Downstate College of Medicine, Brooklyn, NY, USA;6. Department of Medical Statistics, London School of Hygiene and Tropical Medicine, London, UK;7. Department of Cardiology, National and Kapodistrian University of Athens, Hippocration Hospital, Athens, Greece;8. Department of Cardiology, Baylor Jack and Jane Hamilton Heart and Vascular Hospital, Dallas, TX, USA;9. Medtronic PLC, Santa Rosa, CA, USA;10. Department of Cardiovascular Medicine, Jichi Medical University School of Medicine, Tochigi, Japan;1. Department of Engineering, University of Almeria, Carretera de Sacramento s/n, 04120 Almeria, Spain;2. CIAIMBITAL (Research Center on Mediterranean Intensive Agrosystems and Agrifood Biotechnology), University of Almeria, 04120 Almeria, Spain;1. Division of Physics and Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea;2. Department of Engineering Science, University of Oxford, Oxford, UK;3. Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea;4. Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK;1. School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, Zhejiang 315211, China;2. School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China;3. Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials, Technology and Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Zhejiang, Ningbo 315201, China;1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an, 710072, PR China;2. Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Science, Northwestern Polytechnical University, Xi''an, 710072, PR China;1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China;2. Beijing Key Laboratory of Advanced Functional Materials and Thin Film Technology, Beihang University, Beijing 100191, China |
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| Abstract: | Multilayered (Pb1−xSrx)TiO3 (PST(x)) thin films consisted of uniform, PST(x) and heterostructure, PST(x)–PST80 were synthesized by coating the solutions with different Sr contents (50 ≤ x, Sr(mol%) ≤80), respectively. Their structural and dielectric properties were investigated in terms of composition and stacking sequence of each film. Among uniform PST(x) thin films, the PST60 films showed the highest dielectric constant and tunability, while so lower figure of merit which is an important parameter for microwave tunable device application was obtained due to relatively higher dielectric loss. In an effort to bring down the dielectric loss, the PST(x) thin films were alternately coated with PST80 thin layer. Dielectric properties of the heterostructured PST(x)–PST80 films were found to be dependent on the intrinsic dielectric values of each film composition and corresponding phase transition temperature shift effect. Furthermore, surface roughness became smoother by inserting PST80 thin layer, resulting in decrease in dielectric loss. In case of the PST60–PST80 heterostructured film, despite of slight decrease in tunability, the figure of merit on account of lowered dielectric loss was effectively improved (>40%), compared to that of the uniform PST60 film. |
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