Electrical properties of nickel oxide thin films for flow sensor application |
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| Affiliation: | 1. Research Institute, Daeyang Electric Co. Ltd., Technical Research 503, Shinpyong-dong, Saha-gu, Busan 604-030, South Korea;2. Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH 44106, USA;1. State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;2. Department of Physics, Cornell University, 117 Clark Hall, Ithaca, NY 14853, United States;1. Graduate School of Engineering, Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;2. The Center of Ultimate Technology on nano-Electronics, Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;1. Northeast Petroleum University, Daqing 163318, China;2. Designing Institute, China Petrolum Pipeline Bureau, Tianjin 065000, China;1. School of Fundamental Science, Universiti Malaysia Terengganu, 21030 Kuala Terengganu, Terengganu, Malaysia;2. Faculty of Engineering Technology, Universiti Malaysia Perlis, Level 1, Block S2, UniCITI Alam Campus, Sungai Chuchuh, Padang Besar 02100, Perlis, Malaysia;1. Department of Electrical Engineering and Information Technology, Universität Paderborn, Paderborn, Germany;2. Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;1. IEIIT-Pisa, CNR, via G. Caruso 16, I-56122 Pisa, Italy;2. Marvell Semiconductors, viale della Republica 38, I-27100 Pavia, Italy;3. Dipartimento di Ingegneria dell’Informazione, University of Pisa, via G. Caruso 16, I-56122 Pisa, Italy |
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| Abstract: | In this work, Ni oxide thin films, with thermal sensitivity superior to Pt and Ni thin films, were formed through annealing of Ni films deposited by a r.f. magnetron sputtering. The annealing was carried out in the temperature range of 300–500 °C under atmospheric conditions. Resistivity of the resulting Ni oxide films were in the range of 10.5 μΩ cm/°C to 2.84 × 104 μΩ cm/°C, depending on the extent of Ni oxidation. The temperature coefficient of resistance (TCR) of the Ni oxide films also depended on the extent of Ni oxidation; the average TCR of Ni oxide resistors, measured between 0 and 150 °C, were 5630 ppm/°C for the 300 °C and 2188 ppm/°C for 500 °C films. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications. |
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