Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor |
| |
| Affiliation: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwain 70101, ROC;2. Department of Electrical Engineering, Chien Kuo Technology University, Changhua, Taiwan, ROC;3. Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, ROC;1. DISTAV, Botanical Garden, University of Genoa, Corso Dogali 1M, 16136 Genova, Italy;2. DISTAV, University of Genoa, Corso Europa 26, 16132 Genova, Italy;1. College of Computer Science and Electronic Engineering, Hunan University, Changsha, Hunan 410082, China;2. College of Electrical and Information Engineering, Huaihua University, Huaihua, Hunan 418008, China;1. Graduate Institute of Teaching Chinese as a Second/Foreign Language at National Kaohsiung Normal University, 116, Heping 1st Rd., Lingya District, Kaohsiung 802, Taiwan, ROC;2. Department of Chinese as a Second Language at National Taiwan Normal University, 162, Section 1, Heping East Rd., Taipei 10610, Taiwan, ROC;3. Taiwan Shofu University, 168, Nanshi Li, Madou Dist., Tainan, Taiwan, ROC;4. Department of English at National Kaohsiung Normal University, Taiwan, ROC;5. Zhong-shan Senior High School, 2, Zhengfeng St., Sanmin District, Kaohsiung 807, Taiwan, ROC;1. School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei, Anhui 230022, PR China;2. Engineering Research Center of Building Energy-efficient Control and Evaluation, Ministry of Education, Hefei, Anhui 230022, PR China |
| |
| Abstract: | An interesting hydrogen sensor based on a high electron mobility transistor (HEMT) device with a Pd–oxide–In0.49Ga0.51P gate structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity and transient responses of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pd/insulator interface. The kinetic and thermodynamic properties of hydrogen adsorption are also studied. Experimentally, good hydrogen detection sensitivities, large magnitude of current variations (3.96 mA in 9970 ppm H2/air gas at room temperature) and shorter absorption response time (22 s in 9970 ppm H2/air gas at room temperature) are obtained for a 1.4 μm × 100 μm gate dimension device. Therefore, the studied device provides a promise for high-performance solid-state hydrogen sensor, integrated circuit (IC) and micro electro-mechanical system (MEMS) applications. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
