Microwave dielectric losses caused by lattice defects |
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| Affiliation: | 1. National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu, 610054, People''s Republic of China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu, 610054, People''s Republic of China;1. College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, China;2. School of Science, Xi’an University of Posts and Telecommunications, Xi’an 710121, China;3. The Key Laboratory of Electronic Thin Film and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China;1. Institute of Electro Ceramics & Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, PR China;2. School of Mechanical Engineering, Hefei University of Technology, Hefei, 230009, PR China;1. College of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, PR China;2. School of Engineering and the Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UK;3. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, PR China;4. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, PR China;5. Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China;6. Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, Tehran 14115-143, Iran |
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| Abstract: | Dielectric loss tangent at microwave frequency is mainly determined by the anharmonic terms in the crystal's potential energy. In addition, there is a kind of lattice defect that increases the dielectric loss tangent seriously. This paper presents the experimental results for two materials; the system Ba(Zn,Ta)O3–BaZrO3 and (Zr,Sn)TiO4. The dielectric loss tangents of the system Ba(Zn,Ta)O3–BaZrO3 increases seriously when the B-site ions distribute disorderedly in the crystal. The doping of oxygen vacancies and acceptor ions in (Zr,Sn)TiO4 increase tan δ by the way they increase the gradient and intercept of linear frequency dependency of tan δ. These experimental results are reasonably explained by Schlömann's theory. He predicted that the dielectric loss tangent increases when the ions are distributed disorderedly in a way that they break the periodic arrangement of charges in the crystal, and that the increase of tan δ is negligible if the disordered charge distribution maintains the charge neutrality within a short range of the lattice constant in the crystal. |
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