Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings |
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| Affiliation: | 1. Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Preparatoire aux Etudes Scientifiques et Techniques, La Marsa 2070, Tunis, Tunisia;2. Instituto de Ciencia de los Materials, Universidad de Valencia, P. O. Box 22085, 46071 Valencia, Spain;3. Instituto de Microelectrónica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain |
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| Abstract: | We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy. |
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