Computation of 3D MEMS electrostatics using a nearly exact BEM solver |
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| Affiliation: | 1. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2. State Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;3. Qingdao Center of Resource Chemistry and New Materials, Qingdao 266000, China;1. The University of British Columbia, 6224 Agricultural Road, Vancouver, BC, Canada V6T 1Z1;2. McGill University, 3600 rue University, Montreal, QC, Canada H3A 2T8;3. Université de Montréal, 2900 Boulevard Édouard-Montpetit, Montréal, QC, Canada H3T 1J4;4. TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3;5. University of Victoria, PO Box 3055, STN, CSC, Victoria, BC, Canada V8W 3P6;6. Laboratori Nazionali di Frascati dell''INFN, Via Enrico Fermi 40, I-00044 Frascati, Italy;1. Institute for Nuclear Material Sciences, SCK·CEN, 2400 Mol, Belgium;2. Department of Applied Physics, Ghent University, 9000 Ghent, Belgium;3. Division of Materials, CIEMAT, 28040 Madrid, Spain;4. ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St Paul-lez-Durance Cedex, France;5. Forschungszentrum Julich, Inst. Energie & Klimaforsch Plasmaphys, D-52425 Julich, Germany;1. Department of Electrophysics, National Chiayi University, Chiayi, 60004, Taiwan, ROC;2. National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan, ROC;3. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, ROC;4. Department of Physics, Brooklyn College, CUNY, NY 11210, USA;5. Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC;1. Department of Physics, University of Tehran, North-Kargar Street, Tehran, Iran;2. Department of Physics, Islamic Azad University, Science and Research Branch, Tehran, Iran;3. Department of Advanced Technologies, University of Mohaghegh Ardabili, Namin, Ardabil, Iran;4. Department of Materials Engineering and Nanotechnology, Sabalan University of Advanced Technologies (SUAT), Namin, Iran;5. SUPA and Institute of Thin Films, Sensors and Imaging, University of The West of Scotland, High Street, Paisley, UK;6. Department of Physics, University of Qom, Qom, Iran |
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| Abstract: | The electrostatic properties of thin plate shaped structures relevant to the micro-electro-mechanical systems (MEMS) have been computed using a nearly exact boundary element method (BEM) solver. The solver uses closed form expressions for three-dimensional potential and force fields due to uniform sources/sinks distributed on finite flat surfaces. The expressions have been validated and, being analytical, have been found to be applicable throughout the physical domain. The solver has been applied to compute accurately and efficiently the charge densities on thin plate shaped conductors as used in MEMS components. We have presented results for the model problem of parallel plate capacitors and compared them with results obtained from several other BEM based solvers. |
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