B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics |
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| Affiliation: | 1. Materials Department, Queen Mary University of London, Mile End Road, London E1 4NS, UK;2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Ding Xi Road, Shanghai 200050, China;1. Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia;2. Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia;1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;2. China Academy of Engineering Physics, Mianyang 621907, China;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People''s Republic of China;2. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People''s Republic of China;1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, 710071, China;2. Key Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education/ Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, Guilin, 541004, China;3. Electronic Material Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, 710049, China |
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| Abstract: | The electrical properties of B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9-based ceramics have been investigated. The effect of donor and acceptor doping on the dielectric constant, coercive field, dc conductivity and piezoelectric constant are presented. The band gap of Bi3NbTiO9 (BNTO) is about 3.4 ± 0.2 eV, determined from high-temperature dc conductivity measurements. All of the ceramics are ferroelectrics with high Curie points (∼900 °C). In acceptor doped ceramics, a low-temperature peak in the dielectric loss tangent is explained in terms of a Debye-type relaxation that results from an oxygen ion-jump mechanism. The activation energy for the relaxation is calculated as 0.93 ± 0.05 eV. The reduction of the piezoelectric constant below 500 °C is produced by depolarization, which is produced by the switching of thermally unstable non-180° domain walls. |
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