Indirect removal of SU-8 photoresist using PDMS technique |
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Affiliation: | 1. Department of Electro-optical Engineering, National Taipei University of Technology, Taiwan;2. Department of Mechanical Engineering, National Taiwan University, Taiwan;3. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Taiwan;1. Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar 161006, China;2. Department of Physics, College of Science, Qiqihar University, Qiqihar 161006, China;1. MINOS-EMaS, Universitat Rovira i Virgili, Avda. Països Catalans 26, 43007 Tarragona, Spain;2. Central European Institute of Technology (CEITEC), Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic;3. Scientific Service, Universitat Rovira i Virgil, Avda. Països Catalans 26, 43007 Tarragona, Spain;4. Division of Materials Chemistry, Faculty of Engineering, Hokkaido University, N-13, W-8, Sapporo 060-8628, Japan;1. Photonics Research Centre, University of Malaya, 50603 Kuala Lumpur, Malaysia;2. Department of Physics, Northwest University, Xi’an, Shaanxi 710069, China;3. Department of Electrical and Electronic Engineering, The University of Nottingham Malaysia Campus, 43500, Malaysia |
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Abstract: | SU-8 photoresist shows superior images for thick film lithography and has been utilized as an electroplating mold. However, crosslinked SU-8 is difficult to remove reliably from high-aspect-ratio microstructures (HARMs) without damage or alteration to the electroplated metal. In this paper, an indirect SU-8 removal method is proposed. Instead of directly using SU-8 microstructure as the electroplating mold, a polydimethysiloxane (PDMS) replica is employed. The metallic micromold insert obtained through this method can be easily peeled off from the PDMS replica, meanwhile with high resolution and smooth surfaces. |
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