Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy |
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| Affiliation: | 1. College of Chemistry and Material Science, Shandong Agricultural University, Taian, Shandong 271000, China;2. Taian Entry-Exit Inspection and Quarantine Bureau, Taian, Shandong 271000, China;3. College of Chemical and Environmental Engineering, Qingdao University, Qingdao, Shandong 266071, China;1. ITMO University, Kronverksky pr. 49, St. Petersburg 197101, Russian Federation;2. DTU Fotonik – Department of Photonics Engineering, Technical University of Denmark, Ørsteds Pl. 343, DK-2800 Kongens Lyngby, Denmark;1. Department of Chemistry, Tsinghua University, Beijing, 100084, China;2. The Ministry-Province Jointly Constructed Base for State Key Lab-Shenzhen Key Laboratory of Chemical Biology, The Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China;3. Laboratory of Chemical Genomics, School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Shenzhen 518055, China;1. Department of Electrical and Electronics Eng., Erciyes University, 38039, Kayseri, Turkey;2. Department of Electrical and Computer Eng., Boston University, 8 Saint Mary’s Street, Boston, MA, 02215, United States;3. Photonics Center, Boston University, 8 Saint Mary’s Street, Boston, MA, 02215, United States;4. Department of Electrical-Electronics Eng., Nuh Naci Yazgan University, Kayseri, Turkey;1. State Key Laboratory of Industrial Control Technology, Institute of Cyber Systems and Control, Zhejiang University, Hangzhou, 310027, China;2. School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, 225002, China |
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| Abstract: | TlGaAs/GaAs multiple-quantum-well (MQW) structures were grown on GaAs substrates at a substrate temperature of 190 °C by molecular-beam epitaxy. The MQW structures were intended to consist of four identical TlGaAs wells, each of which is sandwiched by GaAs barrier layers. X-ray diffraction was used to investigate the limits to Tl content and thickness of the TlGaAs well layer for forming the MQW structures. Successful growth of TlGaAs/GaAs MQW structures having nominal Tl contents of 6, 8, and 9% was confirmed for the three different well thicknesses of about 15, 10, and 5 nm, respectively, while further increase in Tl content resulted in failure in forming MQW structures. The bounds for forming the MQW structures are discussed in terms of the epitaxial thickness of TlGaAs. The effect of the MQW structures on retarding the formation of Tl droplets is pointed out. |
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