Surface and optical analysis of SiCx films prepared by RF-RMS technique |
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| Affiliation: | 1. Applied Physics Division, PINSTECH, P.O. Nilore, Islamabad, Pakistan;2. Instituto de Investigaciones en Materiales, UNAM, Apdo. Postal 670-360, D.F., 045110, México;3. Centro de Ciencias de la Materia Condensada-UNAM, Apdo. Postal 2681, Ensenada, B.C., 22800, México;4. Departament de Física Aplicada i Òptica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Catalunya, Spain;1. Department of Materials Engineering, Tarbiat Modares University, Tehran, Iran;2. Department of Materials Engineering, University of Tabriz, Tabriz, Iran;1. School of Environmental Science and Engineering, Fujian Normal University, Fuzhou 350007, Fujian Province, China;2. Global Centre for Environmental Remediation, Research and Innovation Division, The University of Newcastle, Callaghan, NSW 2308, Australia;1. Sir Lawrence Wackett Aerospace Research Centre, School of Aerospace, Mechanical & Manufacturing Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia;2. Australian Future Fibres Research and Innovation Centre, Institute for Frontier Materials, Deakin University, VIC 3220, Australia;3. Department of Mechanical Engineering, Imperial College London, London SW7 2BX, UK;4. School of Advanced Manufacturing and Mechanical Engineering, University of South Australia, SA 5095, Adelaide, Australia;5. School of Civil, Environmental & Chemical Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia;6. School of Electrical and Computer Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia |
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| Abstract: | Silicon Carbide thin films have been prepared by RF reactive magnetron sputtering of a silicon target in a mixture of Ar and CH4. Surface analysis was performed by X-ray photoelectron spectroscopy (XPS) to examine the elemental bonding at the surface and in bulk of the material. Optical analysis was carried out by ellipsometry to study the optical constants (n and k) and band gap of the films. Transmission and scanning electron microscopy, FTIR and X-ray diffraction, were employed to supplement our results. The near surface of SiC exposed to atmosphere was primarily composed of SiO2 along with amorphous carbon while the bulk of the material was SiC. At higher plasma power and lower CH4 concentration, the graphitic phase in the surface decreases and the refractive index increases while surface oxide layer remains present. |
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