Optical properties of high density InGaN QDs grown by MOCVD |
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| Affiliation: | 1. Institute of Electro-Optical Engineering, National Sun Yat Sen University, 70, Lien-Hei Rd., Kaohsiung, 804 Taiwan, ROC;2. Department of Materials and Optoelectronic Engineering, National Sun Yat Sen University, Taiwan, ROC;3. Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan, ROC |
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| Abstract: | In this article, we investigate the relaxation time constant and optical properties of InGaN QDs following different durations of SiNx treatment. We find that the smaller size QDs have smaller red shift as temperature increasing, only about 10 meV. Time-resolved PL at various emitting wavelength of the three samples is also investigated. Decreasing time constant as increasing QDs size is observed. Besides, we also find the decreasing time constant with shorter wavelength. Meanwhile, decreasing time constant as increasing emitting wavelength is characterized and attributed as an increasing confinement of excitons in QDs with higher localization energy and thus with a higher electron-hole overlap. |
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