| 高导电性ZAO陶瓷靶材及薄膜的制备 |
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| 引用本文： | 龙涛,朱德贵,王良辉. 高导电性ZAO陶瓷靶材及薄膜的制备[J]. 电子元件与材料, 2004, 23(2): 31-34 |
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| 作者姓名： | 龙涛 朱德贵 王良辉 |
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| 作者单位： | 西南交通大学材料科学与工程学院,四川,成都,610031;西南交通大学材料科学与工程学院,四川,成都,610031;西南交通大学材料科学与工程学院,四川,成都,610031 |
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| 基金项目： | 西南交通大学校基金资助项目(No.2000A02) |
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| 摘 要： | 用热等静压法烧结制备了高导电性ZAO(铝掺杂氧化锌)陶瓷靶材,并用直流磁控溅射法制备出ZAO透明导电薄膜。靶材的致密度达98.7%,电阻率为2.2?03·cm;制得薄膜的最低电阻率为9.3?04·cm,可见光平均透射率大于85%。浅析了靶材的组织结构及靶材的电学、力学性能和薄膜制备的主要实验参数对其光、电性能的影响。
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| 关 键 词： | 陶瓷靶材 ZAO透明导电薄膜 热等静压 直流磁控溅射 |
| 文章编号： | 1001-2028(2004)02-0031-04 |
Highly Conductive ZAO Ceramic Target and Thin Films:Preparation |
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| LONG Tao,ZHU De-gui,WANG Liang-hui. Highly Conductive ZAO Ceramic Target and Thin Films:Preparation[J]. Electronic Components & Materials, 2004, 23(2): 31-34 |
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| Authors: | LONG Tao ZHU De-gui WANG Liang-hui |
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| Abstract: | Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering. The relative density of the target reachs 98.7% and the resistivity 2.210-3 cm.The lowest resistivity of the films is 9.310-4cm.The average transmittance of the films in the visible region exceeds 85%. The electrical, mechanical and structural properties of the targets, and the optical, electrical properties of the films were analyzed respectively. Furthermore, the effect of main experimental parameters on the electrical and optical properties of the films was investigated. |
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| Keywords: | ceramic target ZAO transparent conducting thin films hot isostatic pressing dc magnetron sputtering |
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