A Trapping Mechanism for Autodoping in Silicon Epitaxy -- I. Theory

An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms ( N 0 over A) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.