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Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering |
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| Authors: | Qi Song Cheng-Ren Li Jian-Yong Li Wan-Yu Ding Shu-Feng Li Jun Xu Xin-Lu Deng Chang-Lie Song |
| Affiliation: | aDepartment of Physics, Dalian University of Technology, Dalian 116024, China bDepartment of Physics, LiaoNing Normal University, Dalian 116024, China cState Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China |
| Abstract: | The Yb:Er co-doped Al2O3 thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O2:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results. |
| Keywords: | MW-ECR plasma Yb:Er co-doped Al2O3 thin films Photoluminescence spectrum |
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