| 薄膜金属化低温共烧陶瓷基板的阻碍层对共晶焊的影响 |
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| 引用本文： | 吴申立.薄膜金属化低温共烧陶瓷基板的阻碍层对共晶焊的影响[J].电子元件与材料,2001,20(4):14-15. |
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| 作者姓名： | 吴申立 |
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| 作者单位： | 信息产业部电子第43研究所, |
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| 摘 要： | 讨论了低温共烧陶瓷基板薄膜金属化技术中，有效阻碍层的选择对基板共晶焊的剪切强度、互连阻抗、可焊性的影响。试验结果表明，Ti / Ni是一种高可靠性的阻碍层，且Ti / Ni / Au也是一种较理想的低温共烧陶瓷基板薄膜金属化结构。
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| 关 键 词： | 低温共烧陶瓷基板 薄膜金属化 共晶焊 阻碍层 剪切强度 |
| 文章编号： | 1001-2028(2001)04-0014-02 |
Effect of Barrier of Thin-film Metallized LTCC Substrates on Eutectic Solder |
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| WU Shen-li.Effect of Barrier of Thin-film Metallized LTCC Substrates on Eutectic Solder[J].Electronic Components & Materials,2001,20(4):14-15. |
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| Authors: | WU Shen-li |
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| Abstract: | The selection of effective barrier metals for thin-film metallized LTCC substrates is discussed. Barrier metals have some effects on shear strength, interconnection resistance and solder wttability, etc. The experiment results show that Ti/Ni is a highly reliable barrier metal and Ti/Ni/Au an ideal thin-film metallized structure for LTCC substrates. |
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| Keywords: | LTCC substrate thin-film metallization eutectic solder barrier shear strength |
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