| 量子阱效应及其光电性质的表面光电压谱表征 |
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| 引用本文： | 王华英,朱海丰,冯云鹏. 量子阱效应及其光电性质的表面光电压谱表征[J]. 河北工程大学学报(自然科学版), 2004, 21(3): 101-104 |
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| 作者姓名： | 王华英 朱海丰 冯云鹏 |
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| 作者单位： | 河北工程学院,理学院,河北,邯郸,056038;河北大学,物理科学与技术学院,河北,保定,071002 |
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| 基金项目： | 河北省自然科学基金资助项目(500084) |
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| 摘 要： | 讨论了量子阱限制效应、激子的束缚能以及激子峰的形成,分析了量子阱的光电特性及量子阱表面光电压的形成和特点。结果表明:量子阱有根本不同于体材料的光电特性。
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| 关 键 词： | 半导体 量子阱 量子阱效应 表面光电压谱 激子峰 |
| 文章编号： | 1007-6743(2004)03-00101-04 |
| 修稿时间： | 2004-02-18 |
Quantum well effect and characterization of photoelectric properties of quantum well using surface photovoltage spectroscopy |
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| WANG Hua-ying,ZHU Hai-feng,FENG Yun-peng. Quantum well effect and characterization of photoelectric properties of quantum well using surface photovoltage spectroscopy[J]. Journal of Hebei University of Engineering(Natural Science Edition), 2004, 21(3): 101-104 |
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| Authors: | WANG Hua-ying ZHU Hai-feng FENG Yun-peng |
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| Affiliation: | WANG Hua-ying~1,ZHU Hai-feng~2,FENG Yun-peng~1 |
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| Abstract: | In this paper, quantum well effect, exciton binding energy and the formation of excitonic peak are discussed. The photoelectric properties of quantum well, the formation and the properties of surface photovoltage of quantum well are studied. |
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| Keywords: | semiconductor quantum well quantum well effect surface photovoltage spectroscopy excitonic peak |
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