Plasma anodisation of Ga1?xInxAs (x=0.35 and 0.10) and study of MOS interface properties |
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| Authors: | Gourrier S Chane JP |
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| Affiliation: | Laboratoires d'Electronique et de Physique Appliquée, Limeil-Brévannes, France; |
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| Abstract: | Oxides have been grown on n-type Ga1?xInxAs/GaAs wafers (x=0.35 and 0.10) using plasma anodisation. According to C/V measurements, the surface can be biased into inversion and probably accumulation on Ga0.65In0.35As. The interface trap density is about 1012 cm?2eV?1 near midgap, and about 1013 cm?2eV?1 near flatband. MOS capacitors on Ga0.90In0.10As exhibit a high density of interface States 0.4?0.5 eV below the conduction band. |
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