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| 快热退火对Co/n-Poly-SiGe肖特基结I-V-T特性的影响 | |
| 引用本文： | 王光伟,姚素英,徐文慧,王雅欣. 快热退火对Co/n-Poly-SiGe肖特基结I-V-T特性的影响[J]. 液晶与显示, 2011, 26(5): 582-586. DOI: 10.3788/YJYXS20112605.0582 |
| 作者姓名： | 王光伟 姚素英 徐文慧 王雅欣 |
| 作者单位： | 1. 天津大学电信学院,天津,300072;天津职业技术师范大学电子学院,天津,300222 2. 天津大学电信学院,天津,300072 3. 天津职业技术师范大学电子学院,天津,300222 |
| 摘 要： | 采用射频磁控溅射法在n-Si(100)衬底上沉积Si1-xGex薄膜,俄歇电子谱(AES)测定Si1-xGex薄膜的Ge含量约为17%。对薄膜进行高温磷扩散掺杂,制得n-poly-Si0.83Ge0.17。在n-poly-Si0.83Ge0.17薄膜上溅射一层Co膜,制成Co/n-poly-Si0.83Ge0.17/n-Si肖特基结样品。在300～600℃范围内,对样品做快热退火。对不同退火温度下的样品做I-V-T测试。研究发现,测试温度升高,不同退火温度样品的肖特基势垒高度(SBH)的差别变小,500℃退火的样品,表观SBH最小。总体上,SBH随测试温度的升高而变大,理想因子的变化趋势则与之相反。基于SBH的不均匀分布建模,对实验结果给出了较为合理的解释。 |
| 关 键 词： | 变温I-V测试 肖特基结 快热退火 理想因子 肖特基势垒高度的不均匀性 |
Effects of Rapid Thermal Annealing on I-V T Properties of Schottky Junction Co/n-poly-SiGe |
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| WANG Guang-wei,YAO Su-ying,XU Wen-hui,WANG Ya-xin. Effects of Rapid Thermal Annealing on I-V T Properties of Schottky Junction Co/n-poly-SiGe[J]. Chinese Journal of Liquid Crystals and Displays, 2011, 26(5): 582-586. DOI: 10.3788/YJYXS20112605.0582 | |
| Authors: | WANG Guang-wei YAO Su-ying XU Wen-hui WANG Ya-xin |
| Affiliation: | WANG Guang-wei1,2,YAO Su-ying1,XU Wen-hui2,WANG Ya-xin2(1.Telecommunication College,Tianjin University,Tianjin 300072,China,2.School of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China) |
| Abstract: | On n-Si(100) substrates,the Si1-xGex films were deposited by RF magnetron sputtering technique.AES spectra determine that Ge content in the Si1-xGex film is 17% approxi-mately.The Si0.83Ge0.17 films were doped with phosphorus at high temperature through thermal diffusion to fabricate n-type polycrystalline films,that is,the n-poly-Si0.83Ge0.17.And a Co film was sputtered on it.Thus,the Co/n-poly-Si0.83Ge0.17/n-Si Schottky junctions were made.Rapid thermal annealing(RTA) was conducted on these junctions from... |
| Keywords: | variable temperature I-V testing Schottky junction rapid thermal annealing ideality factor inhomogeneity of Schottky barrier height |
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