| SiGe HBT异质结势垒高度物理模型研究 |
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| 引用本文： | 王生荣,戴广豪,李文杰,傅文渊,李竞春,杨谟华. SiGe HBT异质结势垒高度物理模型研究[J]. 微电子学, 2006, 36(5): 604-607 |
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| 作者姓名： | 王生荣 戴广豪 李文杰 傅文渊 李竞春 杨谟华 |
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| 作者单位： | 电子科技大学,微电子与固体电子学院,四川,成都,610054 |
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| 摘 要： | 基于SiGe HBT异质结势垒效应(HBE)产生的物理机制,综合考虑Ge引入集电区和大电流下电流感应基区中少子浓度对空穴浓度的影响,建立了异质结势垒高度解析模型。结果表明,将Ge引入集电区可有效地推迟HBE发生;同时,考虑少子浓度的影响,势垒高度具有明显的饱和趋势,峰值约为0.07 eV。
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| 关 键 词： | SiGeHBT 异质结势垒效应 解析模型 |
| 文章编号： | 1004-3365（2006）05-0604-04 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-102006-07-27 |
Modeling of Heterojunction Barrier Effects in SiGe HBT Operating at High Current |
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| WANG Sheng-rong,DAI Guang-hao,LI Wen-jie,FU Wen-yuan,LI Jing-chun,YANG Mo-hua. Modeling of Heterojunction Barrier Effects in SiGe HBT Operating at High Current[J]. Microelectronics, 2006, 36(5): 604-607 |
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| Authors: | WANG Sheng-rong DAI Guang-hao LI Wen-jie FU Wen-yuan LI Jing-chun YANG Mo-hua |
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| Affiliation: | School of Microelec. and Sol. Sta. Electro., Univ. of Elec. Sci. and Technol. of China, Chengdu, Sichuan, 610054, P. R. China |
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| Abstract: | Based on the physical mechanism of heterojunction barrier effects(HBE) in SiGe HBT's,an analytical model of barrier height of Si/SiGe heterojunction is studied with effects of different Ge profile in collector and the concentration of electrons in base region on the concentration of holes at high current taken into consideration.Results show that Ge introduced into the collector can delay HBE.Meanwhile,the proposed model exhibits apparent saturation trend of barrier height at 0.07 eV when effects of minority carrier concentration are taken into consideration. |
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| Keywords: | SiGe HBT Heterojunction barrier effects Analytical model |
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