| GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象 |
| |
| 引用本文： | 宁Jun 夏冠群. GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象[J]. 半导体杂志, 2000, 25(1): 23-26 |
| |
| 作者姓名： | 宁Jun 夏冠群 |
| |
| 作者单位： | 合肥工业大学应用物理系半导体器件与微电子专业!230009(宁珺，丁勇，毛友德)，中国科学院上海冶金所!200050(夏冠群，赵福川，赵建龙) |
| |
| 摘 要： | 旁栅效应是制约GaAs集成电路性能和集成度的有害寄生效应。本文研究了MESFET电路的旁栅效应的光敏特性和迟滞现象 ,认为这两个现象可能与衬底深能级 (如EL2 )有密切的关系 ,通过减小衬底杂质补偿度有可能减轻旁栅效应影响。
|
| 关 键 词： | 旁栅效应 光敏特性 迟滞现象 深级级 砷化镓衬底 |
The relation between GaAs substrate's deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect |
| |
| Ning Jun ,Ding Yong ,Xia Guan Qun ,Zhao Fu Chuan ,Mao You De ,Zhao Jian Long. The relation between GaAs substrate's deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect[J]. , 2000, 25(1): 23-26 |
| |
| Authors: | Ning Jun Ding Yong Xia Guan Qun Zhao Fu Chuan Mao You De Zhao Jian Long |
| |
| Affiliation: | Ning Jun 1,Ding Yong 1,Xia Guan Qun 2,Zhao Fu Chuan 2,Mao You De 1,Zhao Jian Long 2 |
| |
| Abstract: | Sidegating is a harmful effect which limits capability and integration of GaAs ICs. In this article, light sensibility and hysteresis of sidegating effect are studied. We think that these two phenomena may have close relation with substrate's deep level EL2, and sidegating effect may be reduced by reducing impurities'compensation of substrate. |
| |
| Keywords: | sidegating effect light sensibility hysteresis deep level |
| 本文献已被 CNKI 维普 等数据库收录！ |
