Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers |
| |
| Authors: | Shterengas L. Belenky G.L. Jeng-Ya Yeh Mawst L.J. Tansu N. |
| |
| Affiliation: | Optoelectron. Group, State Univ. of New York, Stony Brook, NY, USA; |
| |
| Abstract: | The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22--1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices. |
| |
| Keywords: | |
|
|
