| GaAs半导体对1.06m激光的吸收响应 |
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| 引用本文： | 吴明和,阮成礼,杨宏春,刘鸿,王玉明,薛长江.GaAs半导体对1.06m激光的吸收响应[J].激光与光电子学进展,2005(2). |
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| 作者姓名： | 吴明和 阮成礼 杨宏春 刘鸿 王玉明 薛长江 |
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| 作者单位： | 电子科技大学物理电子学院 成都610054
(吴明和，阮成礼，杨宏春，王玉明)，成都大学 成都610053
(刘鸿)，电子科技大学物理电子学院 成都610054(薛长江) |
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| 基金项目： | 预研基金(51407030303DZ0206)，电子科大青年基金(JX03019)资助课题 |
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| 摘 要： | 人射光脉冲波长为1064nm时，GaAs光导开关上的直流电场强度为10~3V/Cm。讨一论了恒定光强和高斯光强时，GaAs杂质吸收载流子浓度随时问变化;将高斯光强时的模拟结果同实验相比较，二者吻合很好。
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| 关 键 词： | 杂质吸收 光生载流子 光激发 俘获效应 |
Absorption of GaAs Semiconductor in 1.06mm Laser |
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| WU Minghe YUAN Chengli YANG Hongchun LIU Hong WANG Yuming XUE Changjiang Physical Electronics school of UESTC,Chengdu , Chengdu University,Chengdu.Absorption of GaAs Semiconductor in 1.06mm Laser[J].Laser & Optoelectronics Progress,2005(2). |
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| Authors: | WU Minghe YUAN Chengli YANG Hongchun LIU Hong WANG Yuming XUE Changjiang Physical Electronics school of UESTC Chengdu Chengdu University Chengdu |
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| Affiliation: | WU Minghe1 YUAN Chengli YANG Hongchun1 LIU Hong2 WANG Yuming1 XUE Changjiang Physical Electronics school of UESTC,Chengdu 610054, 2Chengdu University,Chengdu 610053 |
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| Abstract: | When GaAs photoconductive switch is biased at 103V/cm and illuminated by incident impulse at 1064nm, toconductive current is observed. The phenomenon is explained by impurity absorption theory. With the theory, toconductive carrier density depending on time is simulated when the GaAs photoconductive switch is illuminated constant optical intensity and Gaussian-shaped optical intensity. With comparison, the theoretical result is well eeing with the experimental result. |
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| Keywords: | impurity absorption carriers induced by laser pulse optical excitation capture effect |
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