| 制备工艺对氧化钒薄膜微观结构的影响 |
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| 引用本文： | 张硕,姜胜林,刘梅冬,张弛. 制备工艺对氧化钒薄膜微观结构的影响[J]. 电子元件与材料, 2004, 23(6): 35-37 |
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| 作者姓名： | 张硕 姜胜林 刘梅冬 张弛 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北,武汉,430074 |
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| 基金项目： | 国家高技术研究发展计划资助项目(2002AA325080)，国家自然科学基金重大研究计划项目(90201028) |
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| 摘 要： | 为了研究制备工艺对氧化钒薄膜微观结构的影响,采用X射线衍射和扫描电镜,对用sol-gel法制作的、不同热处理条件下的硅基氧化钒薄膜之结构及形貌进行了分析。结果表明,470℃下制作出的有种子层薄膜无裂纹、致密性好、晶粒尺寸分布均匀,在此温度下热处理4 h得到的有种子层氧化钒薄膜V2O5相最纯,衍射峰最强,而提高热处理温度会导致晶向杂乱,V2O5相的衍射峰强度降低,使得VO2相增多。
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| 关 键 词： | 有机sol-gel法 氧化钒薄膜 微观结构 |
| 文章编号： | 1001-2028(2004)06-0035-03 |
Effect of Preparing Process on the Micro-structure of Thin Film of Vanadium Oxide |
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| ZHANG Shuo,JIANG Sheng-lin,LIU Mei-dong,ZHANG Chi. Effect of Preparing Process on the Micro-structure of Thin Film of Vanadium Oxide[J]. Electronic Components & Materials, 2004, 23(6): 35-37 |
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| Authors: | ZHANG Shuo JIANG Sheng-lin LIU Mei-dong ZHANG Chi |
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| Abstract: | Investigated was the effect of preparing process on the microstructure of thin film of vanadium oxide.This film was prepared on the silicon substrates by sol-gel method , and was heat-treated for four hours at 470℃. XRD and SEM were used to analyze the thin film and the results indicated that the film obtained had: (1) good denseness, even grain size, and no cracks; (2)the purest V2O5 crystallization. With increasing heat-treatment temperature, the intensity of diffraction peak of V2O5 crystallization will decrease, and the VO2 crystallization will increase. |
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| Keywords: | organic sol-gel method thin film of vanadium oxide microstructure |
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