首页 | 本学科首页   官方微博 | 高级检索  
     


Photoluminescence properties of porous silicon layers prepared by electrochemical etching in extremely dilute HF solutions
Authors:Hideki Koyama
Affiliation:(1) Department of Practical Life Studies, Technology Education Group, Hyogo University of Teacher Education, Yashiro Hyogo, 673-1494, Japan
Abstract:Dilute HF solutions with concentrations down to 0.03% have been used to obtain luminescent porous silicon (PSi) layers on p-type Si wafers. The experimental results show that with a constant etching time of 30 min, PSi layers with sufficient luminescence efficiencies can be formed for HF concentrations as low as 0.1%. Because of a significantly lowered critical current density, only very low etching current densities of  ≤0.1 mA cm−2 can result in the formation of luminescent PSi samples in 0.1% HF solutions. A notable result is that these low etching current densities cannot be used to form luminescent PSi layers in concentrated ( ≥1%) HF solutions. The behavior of PL intensity as a function of etching current density has been analyzed over a wide range of HF concentration. The PL intensity is determined by the ratio of the etching current density to the critical current density, suggesting that the presence of silicon oxides plays an important role in the formation of luminescent Si nanostructures in PSi layers.
Keywords:anodization  etching  nanocrystal  nanostructure  photoluminescence  porous silicon
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号