| 退火温度对纳米ZnO薄膜结构与发光特性的影响 |
| |
| 引用本文： | 陈晓清,谢自力,张荣,修向前,顾书林,韩平,施毅,郑有炓. 退火温度对纳米ZnO薄膜结构与发光特性的影响[J]. 微纳电子技术, 2004, 41(11): 24-27 |
| |
| 作者姓名： | 陈晓清 谢自力 张荣 修向前 顾书林 韩平 施毅 郑有炓 |
| |
| 作者单位： | 江苏省光电信息功能材料重点实验室,南京大学物理系,江苏,南京,210093 |
| |
| 基金项目： | 国家重点基础研究发展规划(G2000068305),国家高技术研究发展规划(2001AA311110,2003AA311060),国家自然科学基金(69976014,69806006,69987001),国家杰出青年基金(60025411),江苏省自然科学基金重点项目资助(BK2003203) |
| |
| 摘 要： | 利用溶胶鄄凝胶法在硅衬底上制备了纳米ZnO薄膜。研究了热处理对ZnO薄膜的质量与发光性能的影响。结果表明,纳米ZnO薄膜具有六方纤锌矿结构,并且,随着退火温度的升高,ZnO的晶粒变大,c轴取向性变好,紫外发光强度增强。
|
| 关 键 词： | 溶胶-凝胶法 纳米ZnO薄膜 退火温度 XRD谱 PL谱 喇曼光谱 |
| 文章编号： | 1671-4776(2004)11-0024-04 |
| 修稿时间： | 2004-06-08 |
Influences of annealing temperature on the structure and luminescence of nanometer ZnO films |
| |
| CHEN Xiao-qing,XIE Zi-li,ZHANG Rong,XIU Xiang-qian,GU Shu-lin,HAN Ping,SHI Yi,ZHENG You-dou. Influences of annealing temperature on the structure and luminescence of nanometer ZnO films[J]. Micronanoelectronic Technology, 2004, 41(11): 24-27 |
| |
| Authors: | CHEN Xiao-qing XIE Zi-li ZHANG Rong XIU Xiang-qian GU Shu-lin HAN Ping SHI Yi ZHENG You-dou |
| |
| Abstract: | Nanometer ZnO film was fabricated on Si substrate by Sol-Gel methods. The influences of annealing temperature on the quality and the properties of luminescence of the ZnO film was investigated. Results show that after annealing,the ZnO nanometer thin films showed a hexagonal wurtzite structure,and the grain size of the ZnO nanometer films increases. The c-axis orientation was enhanced and a strong emission band appeared in ultraviolet region with annealing temperature increasing. |
| |
| Keywords: | Sol-Gel nanometer ZnO films annealing temperature XRD PL Raman spectrum |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
