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| 掺杂TiO2的ZnO压敏电阻低压化机理研究 | |
| 引用本文： | 何忠伟,许业文,徐政,孙丹峰. 掺杂TiO2的ZnO压敏电阻低压化机理研究[J]. 低压电器, 2004, 0(6): 9-11,26 |
| 作者姓名： | 何忠伟 许业文 徐政 孙丹峰 |
| 作者单位： | 1. 同济大学,材料科学与工程学院,上海,200092 2. 同济大学,材料科学与工程学院,上海,200092;总装备部工程兵科研一所,江苏,无锡,214035 3. 苏州中普电子有限公司,江苏,苏州,215011 |
| 摘 要： | 介绍了氧化锌(ZnO)低压压敏电阻研究的必要性.分析了TiO2添加剂促进ZnO压敏电阻晶粒长大的过程和机制;探讨了ZnO压敏电阻低压化机理.宏观电性能测试表明:ZnO压敏电阻中TiO2添加剂的加入,可很好地实现ZnO压敏电阻低压化的目的. |
| 关 键 词： | 氧化锌压敏电阻 晶粒长大 低压 |
| 文章编号： | 1001-5531(2004)06-0009-03 |
Mechanism of Low-Voltage ZnO Varistor with TiO2 Addition |
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| HE Zhong-wei,XU Ye-wen,XU Zheng,SUN Dan-feng. Mechanism of Low-Voltage ZnO Varistor with TiO2 Addition[J]. Low Voltage Apparatus, 2004, 0(6): 9-11,26 | |
| Authors: | HE Zhong-wei XU Ye-wen XU Zheng SUN Dan-feng |
| Abstract: | Necessity of the research on low-voltage ZnO varistor was introduced. Then, process and mechanism of grain growth of ZnO varislor with TiO2 addition were analyzed. In the end, mechanism of low-voltage ZnO varistor was probed. Macroscopic electric test shows that adding the TiO2 additive into the ZnO varistor properly can realize the aim making the ZnO varistor to be using in low voltage range. |
| Keywords: | TiO2 |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |