Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> quantum wires期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Gex quantum wires

Authors:	Andrey Chaves Jusciane da Costa e Silva José Alexander de King Freire Marcos Henrique Degani Valder Nogueira Freire Gil de Aquino Farias

Affiliation:	(1) Universidade Federal do Ceará, Fortaleza, Ceará, Brazil

Abstract:	The exciton properties of Si/Si _1-x Ge _x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si _0.85 Ge _0.15 (Si_0.70Ge_0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.

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