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| Properties of GaSb Substrate Wafers for MOCVD Ⅲ-Ⅴ Antimonids | |
| 作者姓名： | 彭瑞伍 丁永庆 徐晨梅 王占国 |
| 作者单位： | Peng Ruiwu，Ding Yongqing and Xu ChenmeiShanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China Wang ZhanguoInstitute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China |
| 摘 要： | １ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅＧａＳｂｓｉｎｇｌｅｃｒｙｓｔａｌｓａｒｅｏｆｔｅｎｕｓｅｄａｓｔｈｅｓｕｂｓｔｒａｔｅｍａｔｅｒｉａｌｓｆｏｒｐｒｅｐａｒｉｎｇｅｐｉｌａｙｅｒｓｏｆｌｉｇｈｔｅｍｉｔｉｎｇａｎｄｌｉｇｈｔｄｅｔｅｃｔｉｎｇｄ... |
| 本文献已被 CNKI 等数据库收录！ | |