A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design |
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| Authors: | Salcedo JA Liou JJ |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; |
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| Abstract: | A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions. |
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