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Synthesis, crystal structure and properties of the new semiconductor (EVT)4·[Pt(CN)4] |
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| Authors: | A. D. Dubrovskii N. G. Spitsina A. N. Chekhlov O. A. Dyachenko L. I. Buravov A. A. Lobach Jose Vidal Gancedo Concepcio Rovira |
| Affiliation: | a Institute of Problems of Chemical Physics RAS, Moscow District, Chernogolovka 142432, Russia b Institut de Ciència de Materials de Barcelona, CSIC, Campus de la U.A.B., E-08193, Bellaterra, Spain |
| Abstract: | A novel radical cation salt based on of the donor (4,5-ethylenedithio-4′,5′-vinylenedithio)tetrathiafulvalene (EVT) with the square planar anion Pt(CN)42− has been synthesized: (EVT)4·[Pt(CN)4] (1). According to the X-ray analysis its crystal structure includes EVT cation layers alternating with anion layers along the a-axis of the unit cell. The radical cation layer is formed by EVT stacks with β-packing type, the donors in stacks are tetramerized. The EPR spectra of a plate-like crystal of (EVT)4·[Pt(CN)4] salt shows a very weak signal with typical parameters of TTF derivative. The room temperature conductivity of salt 1 is 8×10−2 Ω−1 cm−1 and the temperature dependence of the conductivity exhibits semiconducting character. |
| Keywords: | Author Keywords: Radical cation salts (4,5-Ethylenedithio-4′,5′-vinylenedithio)tetrathiafulvalene Tetracyanoplatinate(II) anion X-ray crystal structure EPR spectroscopy |
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