Surface characterization of MgO:Al,N films with meta‐stable de‐excitation spectroscopy and x‐ray photoelectron spectroscopy |
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| Authors: | Mikihiko Nishitani Yukihiro Morita Masaharu Terauchi Yasuhiro Yamauchi Kyohei Yoshino Masahiro Sakai Yusuke Takata Yasushi Yamauchi |
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| Affiliation: | 1. Co‐Operation Laboratory of Panasonic, Osaka University, Osaka, Japan, and the Image Devices Development Center, Panasonic Corp., 3‐1‐1 Yagumo‐naka‐machi, Moriguchi, Osaka 570‐8501, Japan;2. Co‐Operation Laboratory of Panasonic, Osaka University, and the AVC Network, Panasonic Corp., Osaka, Japan.;3. Image Devices Development Center, Panasonic Corp., Osaka, Japan.;4. National Institute of Material Science, Inaragi, Japan. |
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| Abstract: | Abstract— It is shown that meta‐stable de‐excitation spectroscopy (MDS) is one of the most useful characterization methods to analyze the interaction between the discharge gas and the surface of the material and is applied to MgO:Al,N films. From the results of the measurement and analysis of helium MDS and the in‐situ discharge experiment, it is confirmed that the limited composition films of MgO:Al,N have potentially a larger secondary‐electron‐emission coefficient (γ) compared with that of MgO. The improvement in γ is caused by the electron‐occupied tailing state at around the top of the valence band which is generated by the introduction of Al,N to MgO films. Also, the O1s spectra measured by x‐ray photoelectron spectroscopy (XPS) shows that the stable surfaces are formed with the introduction of Al,N to MgO films. |
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| Keywords: | MgO PDP MDS thin film XPS discharge |
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