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Highly reliable oxide‐semiconductor TFT for AMOLED displays
Authors:Toshiaki Arai  Narihiro Morosawa  Kazuhiko Tokunaga  Yasuhiro Terai  Eri Fukumoto  Takashige Fujimori  Tatsuya Sasaoka
Affiliation:Sony Corp., Core Device Development Group, Atsugi Tec. 102G‐5F, 4‐14‐1 Asahi‐cho, Atsugi‐shi, Kanagawa 243‐0014, Japan.
Abstract:Abstract— The stability and reliability of oxide‐semiconductor TFTs were investigated. The contact material to the oxide semiconductor affected the thermal stability of the TFT, and a molybdenum‐contact source/drain showed good stability. And the passivating film and TFT structure affected the stability against bias stress and humidity stress, and dc‐sputtered Al2O3 passivation and fully covered channel structure with an etching stopper or source/drain showed good reliability. Moreover, high photo‐stability was confirmed by the bias‐enhanced photo‐irradiation stress test. An 11.7‐in.‐diagonal qHD AMOLED display was demonstrated to provide an applicable solution for a large‐sized OLED and an ultra‐high‐definition LCD‐TV mass production.
Keywords:Oxide‐semiconductor TFT  reliability  stability  stress  contact material  passivation  Al2O3  dc sputter  TFT structure  OLED
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