Organic Nonvolatile Memory Devices Based on Ferroelectricity |
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| Authors: | Ronald C G Naber Kamal Asadi Paul W M Blom Dago M de Leeuw Bert de Boer |
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| Affiliation: | 1. ECN Solar Energy P.O. Box 1, 1755 ZG Petten (The Netherlands);2. Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG Groningen (The Netherlands);3. Holst Centre High Tech Campus 31, 5605 KN Eindhoven (The Netherlands);4. Philips Research Laboratories High Tech Campus 4, 5656 AE Eindhoven (The Netherlands) |
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| Abstract: | A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low‐cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field‐effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed. |
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| Keywords: | Composite materials Data storage Ferroelectric thin films Field‐effect transistors Organic electronics |
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