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稳态工作条件下功率晶体管结温的测量与控制
引用本文:贾颖,曾晨晖,梁伟,李逗,李霁红.稳态工作条件下功率晶体管结温的测量与控制[J].半导体技术,2006,31(1):35-39.
作者姓名:贾颖  曾晨晖  梁伟  李逗  李霁红
作者单位:北京航空航天大学可靠性工程研究所,北京,100083;济南大学物理系,济南,250002
摘    要:为了在试验周期中了解晶体管的结温,提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法.着重介绍了基于理想pn结肖克莱方程的结温测量原理,及试验过程中结温测控的技术难点和解决方案,指出了晶体管结温计算中存在的问题和修正办法,实验结果证明了该方法的可行性.

关 键 词:晶体管  稳态工作  结温  测量  控制
文章编号:1003-353X(2006)01-0035-05
收稿时间:2005-09-19
修稿时间:2005年9月19日

Measurement and Controlling of Junction Temperature of Power Bipolar Transistor During Succession Operation Life Test
JIA Ying,ZENG Chen-hui,LIANG Wei,LI Dou,LI Ji-hong.Measurement and Controlling of Junction Temperature of Power Bipolar Transistor During Succession Operation Life Test[J].Semiconductor Technology,2006,31(1):35-39.
Authors:JIA Ying  ZENG Chen-hui  LIANG Wei  LI Dou  LI Ji-hong
Affiliation:1.Institute of Reliability System Engineering, Beihang University, Beijing 100083, China; 2. Dept. of Physics, Jinan University, Jinan 250002, China
Abstract:A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.Based on the Shockley equation for pn junction,the measuring principle of junction temperature,the problems and the solutions are introduced.The problems and keys in calculating junction temperature are pointed out.The test data validated the feasibility of the method.
Keywords:transistor  succession operation life test  junction temperature  measure  control
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