Strain-compensated 1.3-μm AlGaInAs quantum-well lasers withmultiquantum barriers at the cladding layers |
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| Authors: | Jen-Wei Pan Ming-Hong Chen Jen-Inn Chyi Tien-Tsorng Shih |
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| Affiliation: | Dept. of Electr. Eng., Nat. Central Univ., Chung-Li; |
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| Abstract: | Strain-compensated 1.3-μm AlGaInAs graded-index separate confinement heterostructure (GRINSCH) lasers with multiquantum barrier (MQB) at both the nand p-cladding layers are comprehensively studied and compared with the conventional GRINSCH lasers. It is found that the lasers with MQBs exhibit lower threshold current, higher maximum output power and better temperature characteristics because of the enhanced barrier height for carrier leakage. The characteristic temperature is improved as much as 10 K and the vertical far-field angle is also reduced from 38° to 32° as compared to the conventional counterpart |
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