Monte Carlo simulations of nanometric devices beyond the “mean-field” approximation |
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Authors: | G. Albareda J. Suñé X. Oriols |
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Affiliation: | (1) Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain |
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Abstract: | For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in semiconductor semi-classical Monte Carlo simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this alternative approach for nanoscale devices with few (<100) electrons. The method is compared with the traditional “mean-field” Monte Carlo simulations. It is shown, numerically, that the “mean-field” approximation produces important errors for aggressively-scaled devices. |
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Keywords: | Semiconductor device modeling Monte Carlo methods Electron-electron scattering |
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