| Φ3英寸LEC GaAs单晶的试制 |
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| 引用本文： | 张凡文,刘鹏. Φ3英寸LEC GaAs单晶的试制[J]. 微纳电子技术, 1998, 0(2) |
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| 作者姓名： | 张凡文 刘鹏 |
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| 作者单位： | 淄博金晶电子材料厂 |
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| 摘 要： | 利用ＭＲ３５８单晶炉进行ＬＥＣＧａＡｓ单晶试制，采用原位合成工艺、不规则形状控制系统自动控制单晶的生长。对晶锭进行退火处理前后所做的电学及晶体完整性测试结果表明，退火明显改善了晶体的电学均匀性，消除了晶体内残余的热应力。
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| 关 键 词： | LECGaAs 退火 分凝 MR358单晶炉 |
Development of Φ3in LEC GaAs Single Crystal |
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| Zhang Fanwen,Liu Peng. Development of Φ3in LEC GaAs Single Crystal[J]. Micronanoelectronic Technology, 1998, 0(2) |
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| Authors: | Zhang Fanwen Liu Peng |
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| Abstract: | The development of LEC GaAs grown with MR358 puller is described.With in situ synthesis process,crystal growth is controlled automatically by anomaly shape control system.As shown in the measurements of electrical properties and crystalline perfection taken on as grown and annealed crystal ingots,the annealing process improved the uniformities of resistivity and mobility,and reduced strain in the material markedly. |
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| Keywords: | LEC GaAs Anneal Segregation MR358 puller |
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