无压浸渗制备SiC/Al电子封装材料的结构与性能

将粒度为F280的SiC颗粒振实后直接无压浸渗液态AlSi12Mg8铝合金,制备出高SiC含量的铝基复合材料,并对其结构和性能进行了研究。结果表明:采用该方法制备的SiC/A1复合材料内部组织结构均匀致密,无明显气孔等缺陷,界面产物主要为Mg₂Si,MgO,MgAl₂O₄;平均密度为2.93 g·cm^-3,抗弯强度在320 MPa以上,热膨胀系数为6.14×10^-6～9.24×10^-6 K^-1,导热系数为173 W·m^-1·K^-1,均满足电子封装材料要求。

Microstructure and Performances of SiC/Al Electronic Packing Materials Prepared by Pressureless Infiltration

Using F280 SiC powders and AlSi12Mg8 aluminium alloy as raw materials, the high SiC content SiC/Al composite materials were prepared by pressureless infiltration method, and microstructure and performances of the prepared SiC/Al composites were studied. The results indicate that the microstructure of SiC/Al composites were quite uniform and density without obvious pores defect. The interface reaction products were mainly composed of Mg2Si, MgO and MgAl2O4. All performances of the prepared SiC/Al composites met the requirement of electronic packaging materials with the average density of 2. 93 g ·cm^-3, bending strength of being higher than 320 MPa, coefficient of thermal expansion of 6. 14 ×10^-6～9.24×10^-6K^-1 and thermal conductivity of 173W·m^-1·K^-1.