Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices |
| |
Authors: | Lin Yung-Chen Lu Kuo-Chang Wu Wen-Wei Bai Jingwei Chen Lih J Tu K N Huang Yu |
| |
Affiliation: | Department of Materials Science and Engineering, University of California, Los Angeles 90095-1595, USA. |
| |
Abstract: | We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si110]//PtSi010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|