Mosfet fabrication using ion beam nitridation |
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Authors: | John R Troxell |
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Affiliation: | (1) Electronics Department, General Motors Research Laboratories, 48090-9055 Warren, Michigan |
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Abstract: | Ion beam nitridation has been suggested as an alternative to the conventional local oxidation process which is used in the
fabrication of most metal-oxide-semiconductor (MOS) integrated circuits. The implantation of 2 keV nitrogen ions in doses
of up to 8 x 1017 cm-2 results in the formation of a silicon nitride layer approximately 10 nm thick. Herein we describe the electrical characteristics
of n-channel silicon gate metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this modified local
oxidation process, and compare them to devices fabricated simultaneously but using the conventional local oxidation technology.
The effective device channel lengths and widths are determined from the electrical characteristics of devices with mask (ideal)
dimensions of 4, 6, 8 or 10 μm. The ion beam nitrided devices exhibit a significant reduction in the lateral oxidation effect.
A 1.3 μm increase in channel width relative to conventional processing is observed for the ion beam nitrided devices with
a 690 mm thick field oxide. On the other hand, fixed oxide charge densities are found to increase by a factor of about two
due to the nitrogen implantation, and device channel mobilities are reduced by about 25%. |
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Keywords: | ion beam nitridation nitrogen implantation device characterization local oxidation |
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