Reliability of AllnAs/lnGaAs/lnP HEMT with WSi ohmic contacts |
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| Authors: | H. Sasaki DG K. Yajima N. Yoshida T. Ishida R. Hattori T. Sonoda O. Ishihara S. Takamiya R. Konishi K. Ando |
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| Affiliation: | (1) Quality Assurance Department, Mitsubishi Electric Corporation, 4-1, Mizuhara Itami City, 664 Hyogo, Japan;(2) Optoelectronic & Microwave Devices Lab, Mitsubishi Electric Corporation, 4-1, Mizuhara Itami City, 664 Hyogo, Japan;(3) Faculty of Engineering, Tottori University, 4-101, Koyama, 680 Tottori, Japan |
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| Abstract: | We have investigated the degradation mechanism of Al0.48In0.52As/In0.53Ga0.47As/ InP high electron mobility transistors (HEMTs) using WSi ohmic electrodes. Cross-sectional transmission electron microscopy (TEM) observation and en-ergy dispersive x-ray (EDX) analysis reveal impurities diffusion of gate electrode (titanium: Ti) and fluorine (F) in the AlInAs layer after a high temperature (Ta = 170°C operating life test for 500 h. The decrease of drain current (Ids) during life test shows linear dependence on square root of aging time. It suggests that the degradation is controlled by a diffusion mechanism. Hence, the estimated degradation mechanism of this device is related with decrease of carrier concentration in the epitaxial layer by these diffused impurities. On the other hand, TEM and EDX show no degradation of WSi/InGaAs interface after aging. Therefore, the WSi electrode for this type of HEMT demonstrates excellent high stability under the accelerated operating life test. |
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| Keywords: | AllnAs/lnGaAs/lnP HEMT degradation EDX life test ohmic contact WSi X-TEM |
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