|
|||||
|
|
Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs |
|
| Authors: | S Bouzgarrou Na Sghaier MM Ben Salem A Souifi A Kalboussi |
| Affiliation: | aLaboratoire de Microélectronique et Instrumentation (LMI), Département de physique, Faculté des Sciences de Monastir, Avenue de l'environnement 5000 Monastir, Tunisia bLaboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences de Monastir, Tunisia cEquipe Photothermie, composants électroniques, Structures Mécaniques (PCSM), Institut Préparatoire aux Etudes d'Ingénieurs de Nabeul (IPEIN), Campus universitaire EL Merazka, 8000 Nabeul, Tunisia dInstitut de Nanotechnologie de Lyon (INL) « site INSA », INSA de Lyon, Avenue Jean Capelle, Bâtiment Blaise Pascal, 69621 Villeurbanne cedex, France |
| Abstract: | The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. Ids − Vds measurements as a function of the temperature have first been performed. Several anomalies were observed such as kink and hysteresis effects. C-DLTS measurements have also been performed. From the obtained results, we have established a strong correlation between parasitic effects observed on the output characteristics and deep levels located near the buffer layer interface. |
| Keywords: | HEMT CDLTS Kink effect Hysteresis effect |
| 本文献已被 ScienceDirect 等数据库收录！ | |