CuInS2/In2S3 thin film solar cell using spray pyrolysis technique having 9.5% efficiency |
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Authors: | Teny Theresa John Meril Mathew C Sudha Kartha KP Vijayakumar T Abe Y Kashiwaba |
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Affiliation: | aThin Film Photovoltaic Division, Department of Physics, Cochin University of Science and Technology, Kochi-682 022, India;bDepartment of Electrical and Electronic Engineering, Iwate University, Morioka-020-8551, Japan |
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Abstract: | Copper indium sulfide (CuInS2)/In2S3 solar cells were fabricated using spray pyrolysis method and high short circuit current density and moderate open circuit voltage were obtained by adjusting the condition of deposition and thickness of both the layers. Consequently, a relatively high efficiency of 9.5% (active area) was obtained without any anti-reflection coating. The cell structure was ITO/CuInS2/In2S3/Ag. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell. |
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Keywords: | CuInS2 In2S3 Solar cell Efficiency |
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